STP9NB50FP |
RFQ for STP9NB50FP Required Field |
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| Product | Manufacturers | Pack | D/C |
| STP9NB50FP | - | TO-220 | 05+ |
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Typical Application |
Features |
| ·HIGH CURRENT, HIGH SPEED SWITCHING·SWITH MODE POWER SUPPLIES (SMPS)·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE | TYPE VDSS RDS(on) ID STP9NB50FP 500 V < 0.85 4.9A` TYPICAL RDS(on) = 0.75 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZED |
